Doctoral student in GaN based electronics for high frequency applications

Publiceringsdatum: 2026-04-20

Nu har du chansen att börja jobba som doktorand hos Chalmers Tekniska Högskola AB. Chalmers Tekniska Högskola AB söker en medarbetare på heltid som vill arbeta tills vidare. Kan det vara du? För detta jobb är Göteborg den angivna tjänsteorten.

Om du letar efter en spännande karriär inom doktorand-branschen, har Chalmers Tekniska Högskola AB just nu ett ledigt jobb som kan vara av intresse. Söker du efter en spännande karriär som doktorand? Sök jobbet hos Chalmers Tekniska Högskola AB senast onsdag den tjugonde maj 2026 och bli en del av deras team.

Jobbannons

Research in electronics in based on new semiconductors offers challenges in several thrilling areas. We are now looking for a new team member to join us in our efforts in exploring ultimate limitations in materials and device concepts of transistors based on III-nitride semiconductors. In this work device characterization and modelling are important tools enabling better understanding and directions of optimization of device performance.

About us

The https://www.chalmers.se/en/departments/mc2/research/microwave-electronics/ at the https://www.chalmers.se/en/departments/mc2/ employs more than 40 people performing world-class research on high speed electronic devices, circuits, and systems for a wide range of communication and sensing applications in the frequency range from 1 GHz to 500 GHz. Our facilities include a uniquely well-equipped laboratory for advanced millimeter wave measurements and a state-of-the art cleanroom facility.

A major part our research is targeting new semiconductor materials and devices to enable higher capacity and improved energy efficiency in a wide range of future microwave and millimeter systems. In recent years, electronic devices and circuits based on wide bandgap semiconductors such as III-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and efficiency figure of merits. We will now investigate advanced device concepts to further harvest the potential of III-nitride devices and circuits. Our research in GaN HEMT technology target application within wireless communication and radar systems.

About the research project

This PhD student position will focus on research on III-nitride devices and circuits for high frequency applications. We are exploring new concepts in III-nitride semiconductor material and device processing to optimize important properties, such as high frequency operation, output power, linearity, and efficiency. The goal is to push the limits of III-nitride semiconductor devices. New epitaxial designs are grown in-house or by our collaborative partners. A specific type of transistors, high electron mobility transistors, HEMTs, are fabricated, characterized and evaluated at Chalmers . In this endeavor, the device characterization and modelling are key tools, which offer many challenges. Specifically, the characterization and modelling of non-linear characteristics (e.g. large-signal and trapping effects) are important research areas.

Who we are looking for

The following requirements are mandatory

• To qualify, you should hold a MSc degree in physics or electrical engineering (or equivalent), generally not older than two years.
• Well-documented capability of communicating in English, both spoken and written.
• Important qualities are enthusiasm, to be able to drive and conclude projects independently, take own initiatives and discuss/develop own ideas, be creative and have a problem-solving mindset. The project is in collaboration with other researchers and industry. Therefore, excellent cooperation and social abilities are important

The following experience will strengthen your application

• Experiences in microwave measuremets and characterization of semiconductor devices are meritorious.

What you will do

• Take courses at an advanced level within the https://www.chalmers.se/en/research/we-train-new-researchers/graduate-schools/microtechnology-and-nanoscience/
• Develop your own scientific concepts and communicate the results of your research verbally and in writing
• The position generally also includes teaching on Chalmers' undergraduate level or performing other duties corresponding to 20 percent of working hours
• The project will include a wide range of activities such defining and designing non-linear measurements of importance to characterize semiconductor devices. Also, based on our long tradition on compact modelling, methodologies of extracting small- and large-signal models will be developed.

You will be a member in a team of other PhD students and senior researchers, both from industry and academia, working with semiconductor technology development, characterization, modelling, circuit design, and realization of complete wireless system demonstrators. You will mainly perform research combined with some teaching and collaborative activities with partners. A PhD student position at Chalmers typically consists of 4 years of research and courses plus up to 1 year of departmental work (teaching, external projects etc.)

Contract terms

To read about our contract terms, please go to https://www.chalmers.se/en/about-chalmers/work-with-us/vacancies/?rmpage=job&rmjob=14797&rmlang=UK

What we offer

Find more general information about doctoral studies at Chalmers https://www.chalmers.se/en/research/we-train-new-researchers/about-doctoral-studies/.

Application procedure

To apply, please go to https://www.chalmers.se/en/about-chalmers/work-with-us/vacancies/?rmpage=job&rmjob=14797&rmlang=UK

We welcome your application no later than 2026-05-20

For questions, please contact

Niklas Rorsman

Research Professor

mailto:niklas.rorsman@chalmers.se

We look forward to your application!